MTE652T & MTE652T-I

DRAM Cache embedded

Endurance: 3K P/E cycles (Program/Erase cycles) guaranteed

Wide-temperature model available: promised operational reliability in a wide temperature range (from -40℃ to 85℃)

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SKU
MTE652T & MTE652T-I

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Description / MTE652T & MTE652T-I

MTE652T M.2 SSD features the PCI Express (PCIe) Gen 3 x4 interface and is compatible with NVM Express (NVMe) 1.3 specifications to achieve never-before-seen transfer speeds. The MTE652T features state-of-the-art 3D NAND technology, which allows 96 layers of 3D NAND flash chips to be vertically stacked. Compared to 3D NAND at 64 layers, this density breakthrough greatly improves storage efficiency. The MTE652T is built with DRAM cache for fast access, and is fully tested in-house to guarantee reliability in mission-critical applications, boasting an endurance rating of 3K Program/Erase cycles.

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Specifications
Dimensions 80 mm x 22 mm x 3.58 mm (3.15" x 0.87" x 0.14")
Weight 9 g (0.32 oz)
Form Factor
  • M.2
M.2 Type
  • 2280-D2-M

Interface
Bus Interface
  • NVMe PCIe Gen3 x4

Storage
Flash Type
  • 3D TLC NAND flash
Capacity
  • 128 GB/
  • 256 GB/
  • 512 GB

Operating Environment
Operating Voltage
  • 3.3V±5%
Operating Temperature
  • Standard
    0°C (32°F) ~ 70°C (158°F)
    •  
  • Wide Temp.
    -40°C (-40°F) ~ 85°C (185°F)
Storage Temperature -40°C (-40°F) ~ 85°C (185°F)
Humidity 5% ~ 95%
Shock
  • 1500 G, 0.5 ms, 3 axis
Vibration (Non-operating) 2.17 G (peak-to-peak), 10 Hz ~ 700 Hz (frequency)

Power
Power Consumption (Operation) 3.3 watt(s)
Power Consumption (Sleep) 0.6 watt(s)

Performance
Sequential Read/Write (CrystalDiskMark, max.) Read: 2,100 MB/s
Write: 1,000 MB/s
4K Random Read/Write (IOmeter, max.) Read: 190,000 IOPS
Write: 290,000 IOPS
Mean Time Between Failures (MTBF) 3,000,000 hour(s)
Terabytes Written (Max.) 1,080 TB
Drive Writes Per Day (DWPD) 2 (3 yrs)
Note
  • Speed may vary due to host hardware, software, usage, and storage capacity.
  • The workload used to rate DWPD may be different from your actual workload, which may vary due to host hardware, software, usage, and storage capacity.

 
Description

MTE652T M.2 SSD features the PCI Express (PCIe) Gen 3 x4 interface and is compatible with NVM Express (NVMe) 1.3 specifications to achieve never-before-seen transfer speeds. The MTE652T features state-of-the-art 3D NAND technology, which allows 96 layers of 3D NAND flash chips to be vertically stacked. Compared to 3D NAND at 64 layers, this density breakthrough greatly improves storage efficiency. The MTE652T is built with DRAM cache for fast access, and is fully tested in-house to guarantee reliability in mission-critical applications, boasting an endurance rating of 3K Program/Erase cycles.
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Data sheet

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